Analytical studies of nickel silicide formation through a thin Ti layerFENSKE, F; SCHÖPKE, A; SCHULZE, S et al.Applied surface science. 1996, Vol 104-05, pp 218-222, issn 0169-4332Conference Paper

Clustering on surfaces at finite areal coveragesBAREL, R; MAI, Y; CARLOW, G. R et al.Applied surface science. 1996, Vol 104-05, pp 669-678, issn 0169-4332Conference Paper

Porous silicon layers as a model system for nanostructuresROSSOW, U; FROTSCHER, U; PIETRYGA, C et al.Applied surface science. 1996, Vol 104-05, pp 552-556, issn 0169-4332Conference Paper

Surface core-level shift photoelectron diffraction from As/Si(111)JOHANSSON, L. S. O; GUNNELLA, R; BULLOCK, E. L et al.Applied surface science. 1996, Vol 104-05, pp 88-94, issn 0169-4332Conference Paper

Atomic force microscopy of III-V nanostructures in airREINHARDT, F; DWIR, B; BIASIOL, G et al.Applied surface science. 1996, Vol 104-05, pp 529-538, issn 0169-4332Conference Paper

Band structure evolution in InAs overlayers on GaAs(110)HE, Z. Q; ILIVER, L; KANSKI, J et al.Applied surface science. 1996, Vol 104-05, pp 608-614, issn 0169-4332Conference Paper

Characterization of nanostructures by virtue of the phenomena due to the electron-phonon interactionPOKATILOV, E. P; FOMIN, V. M; KLIMIN, S. N et al.Applied surface science. 1996, Vol 104-05, pp 546-551, issn 0169-4332Conference Paper

Chemical preparation of CdTe(100) and (110) surfaces using atomic hydrogenLUO, Y; SLATER, D. A; LEVY, M et al.Applied surface science. 1996, Vol 104-05, pp 49-56, issn 0169-4332Conference Paper

Graphitization of diamond (111) studied by first principles molecular dynamicsDE VITA, A; GALLI, G; CANNING, A et al.Applied surface science. 1996, Vol 104-05, pp 297-303, issn 0169-4332Conference Paper

In-situ monitoring of surface chemistry and charge transfer at semiconductor surfacesFEFER, E; KRONIK, L; LEIBOVITCH, M et al.Applied surface science. 1996, Vol 104-05, pp 61-67, issn 0169-4332Conference Paper

Metal overlayers on the MBE-grown ZnSe(001) surfaceEVANS, D. A; WOLFFRAMM, D; GNOTH, D et al.Applied surface science. 1996, Vol 104-05, pp 240-247, issn 0169-4332Conference Paper

Optical study of potassium growth on the Si(100) surfaceROY, M; BORENSZTEIN, Y.Applied surface science. 1996, Vol 104-05, pp 147-151, issn 0169-4332Conference Paper

Reconstruction and chemical ordering at the surface of strained (In, Ga)As epilayersSAUVAGE-SIMKIN, M; GARREAU, Y; PINCHAUX, R et al.Applied surface science. 1996, Vol 104-05, pp 646-651, issn 0169-4332Conference Paper

Structural transformations at CaF2/Si(111) interfacesSOKOLOV, N. S; ALVAREZ, J. C; SHUSTERMAN, YU. V et al.Applied surface science. 1996, Vol 104-05, pp 402-408, issn 0169-4332Conference Paper

Weak fluence dependence of charge generation in ultra-thin oxides on siliconFARMER, K. R; DEBAUCHE, C. P; GIORDANO, A. R et al.Applied surface science. 1996, Vol 104-05, pp 369-372, issn 0169-4332Conference Paper

AFM and RHEED study of Ge islanding on Si(111) and Si(100)DEELMAN, P. W; THUNDAT, T; SCHOWALTER, L. J et al.Applied surface science. 1996, Vol 104-05, pp 510-515, issn 0169-4332Conference Paper

Ab initio calculations of the reconstructed (100) surfaces of cubic silicon carbideKÄCKELL, P; FURTHMÜLLER, J; BECHSTEDT, F et al.Applied surface science. 1996, Vol 104-05, pp 45-48, issn 0169-4332Conference Paper

An ARUPS/NEXAFS study of the H₂S /InP(110) adsorbate systemDUDZIK, E; LESLIE, A; O'TOOLE, E et al.Applied surface science. 1996, Vol 104-05, pp 101-106, issn 0169-4332Conference Paper

Characterization of cobalt-diamond (100) interfaces : electron affinity and Schottky barrierBAUMANN, P. K; NEMANICH, R. J.Applied surface science. 1996, Vol 104-05, pp 267-273, issn 0169-4332Conference Paper

Initial stage of oxidation of hydrogen-terminated silicon surfacesHATTORI, T; AIBA, T; IIJIMA, E et al.Applied surface science. 1996, Vol 104-05, pp 323-328, issn 0169-4332Conference Paper

Interface properties of PN_x/InP structures by in-situ remote plasma processesSUGINO, T; SAKAMOTO, Y; MIYAZAKI, T et al.Applied surface science. 1996, Vol 104-05, pp 428-433, issn 0169-4332Conference Paper

Plasma assisted oxidation of SiGe layers at 500°C : interface characterizationTETELIN, C; WALLART, X; VESCAN, L et al.Applied surface science. 1996, Vol 104-05, pp 385-391, issn 0169-4332Conference Paper

Segregation of In atoms at clean and hydrogen passivated InP(100) surfacesSTIETZ, F; ALLINGER, T; POLYAKOV, V et al.Applied surface science. 1996, Vol 104-05, pp 169-175, issn 0169-4332Conference Paper

Atomic phenomena on Si surfaces at adsorption of transition metalsOLSHANETSKY, B. Z.Applied surface science. 1996, Vol 104-05, pp 130-136, issn 0169-4332Conference Paper

Characterization of arsenide/phosphide heterostructure interfaces by scanning tunneling microscopyLEW, A. Y; YAN, C. H; TU, C. W et al.Applied surface science. 1996, Vol 104-05, pp 522-528, issn 0169-4332Conference Paper